전자부품 데이터시트 검색엔진 |
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54ABT646E-QML 데이터시트(PDF) 3 Page - National Semiconductor (TI) |
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54ABT646E-QML 데이터시트(HTML) 3 Page - National Semiconductor (TI) |
3 / 9 page MICROCIRCUIT DATA SHEET MN54ABT646-X REV 0B0 (Absolute Maximum Ratings) (Note 1) Vcc Pin Potential to Ground Potential -0.5V to +7.0V Input Voltage (Note 2) -0.5V to +7.0V Input Current (Note 2) -30mA to +5.0mA Voltage Applied To Any Output -0.5V to 5.5V In the Disabled or Power-Off State -0.5V to Vcc In The High State Current Applied To Output 96mA In The Low State (Max) Junction Temperature (Tj) +175C Ceramic Thermal Resistance See Mil-Std 1835 Junction-To-Case (Theta JC) Storage Temperature -65C to +150C Lead Temperature +300C (Soldering, 10 seconds) ESD Classification Class 3 Maximum Power Dissipation 500 mW Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2: Either voltage limit or current limit is sufficient to protect inputs. Recommended Operating Conditions Supply Voltage (Vcc) 4.5V to 5.5V Operating Temperature -55C to +125C Minimum Input Edge Rate (dV/dt) 50 mV/ns Data Input 20 mV/ns Enable Input 100 mV/ns Clock Input Maximum Output Current -24 mA High Level (Ioh) 48 mA Low Level (Iol) 3 |
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