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74AUP1G332GF 데이터시트(PDF) 10 Page - NXP Semiconductors

부품명 74AUP1G332GF
상세설명  Low-power 3-input OR gate
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
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74AUP1G332GF 데이터시트(HTML) 10 Page - NXP Semiconductors

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74AUP1G332_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01.00 — 27 February 2006
10 of 18
Philips Semiconductors
74AUP1G332
Low-power 3-input OR gate
[1]
All typical values are measured at nominal VCC.
[2]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(C
L × VCC
2
× f
o) = sum of the outputs.
[3]
The condition is VI = GND to VCC.
Tamb = 25 °C
CPD
power dissipation capacitance f = 1 MHz
[2] [3]
VCC = 0.8 V
-
3.1
-
pF
VCC = 1.1 V to 1.3 V
-
3.2
-
pF
VCC = 1.4 V to 1.6 V
-
3.2
-
pF
VCC = 1.65 V to 1.95 V
-
3.4
-
pF
VCC = 2.3 V to 2.7 V
-
3.8
-
pF
VCC = 3.0 V to 3.6 V
-
4.3
-
pF
Table 9:
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8
Symbol
Parameter
Conditions
Min
Typ [1]
Max
Unit
Table 10:
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8
Symbol
Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Unit
Min
Max
Min
Max
CL = 5 pF
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A, B and C to Y
see Figure 7
VCC = 1.1 V to 1.3 V
2.0
10.3
2.0
10.3
ns
VCC = 1.4 V to 1.6 V
1.9
6.4
1.9
6.6
ns
VCC = 1.65 V to 1.95 V
1.4
5.2
1.4
5.4
ns
VCC = 2.3 V to 2.7 V
1.2
3.7
1.2
3.9
ns
VCC = 3.0 V to 3.6 V
1.1
3.1
1.1
3.3
ns
CL = 10 pF
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A, B and C to Y
see Figure 7
VCC = 1.1 V to 1.3 V
2.4
12.0
2.4
12.0
ns
VCC = 1.4 V to 1.6 V
2.0
7.3
2.0
7.6
ns
VCC = 1.65 V to 1.95 V
1.9
5.8
1.9
6.1
ns
VCC = 2.3 V to 2.7 V
1.5
4.5
1.5
4.7
ns
VCC = 3.0 V to 3.6 V
1.4
3.9
1.4
4.1
ns


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