전자부품 데이터시트 검색엔진
  Korean  ▼

Delete All
ON OFF
ALLDATASHEET.CO.KR

X  

Preview PDF Download HTML

AM29BDS128H 데이터시트(HTML) 3 Page - SPANSION

부품명 AM29BDS128H
상세내용  128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Download  89 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  SPANSION [SPANSION]
홈페이지  http://www.spansion.com
Logo SPANSION - SPANSION

AM29BDS128H 데이터시트(HTML) 3 Page - SPANSION

  AM29BDS128H 데이터시트 HTML 1Page - SPANSION AM29BDS128H 데이터시트 HTML 2Page - SPANSION AM29BDS128H 데이터시트 HTML 3Page - SPANSION AM29BDS128H 데이터시트 HTML 4Page - SPANSION AM29BDS128H 데이터시트 HTML 5Page - SPANSION AM29BDS128H 데이터시트 HTML 6Page - SPANSION AM29BDS128H 데이터시트 HTML 7Page - SPANSION AM29BDS128H 데이터시트 HTML 8Page - SPANSION AM29BDS128H 데이터시트 HTML 9Page - SPANSION Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 89 page
background image
DATA SHEET
Publication# 27024
Rev: B Amendment: 3
Issue Date: May 10, 2006
Am29BDS128H/Am29BDS640H
128 or 64 Megabit (8 M or 4 M x 16-Bit)
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single 1.8 volt read, program and erase (1.65 to 1.95 volt)
■ Manufactured on 0.13 µm process technology
■ VersatileIO™ (VIO) Feature
— Device generates data output voltages and tolerates data
input voltages as determined by the voltage on the VIO pin
— 1.8V compatible I/O signals
■ Simultaneous Read/Write operation
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
— Four bank architecture:
128 Mb has 16/48/48/16 Mbit banks
64 Mb has 8/24/24/8 Mbit banks
■ Programable Burst Interface
— 2 Modes of Burst Read Operation
— Linear Burst: 8, 16, and 32 words with wrap-around
— Continuous Sequential Burst
■ SecSiTM (Secured Silicon) Sector region
— Up to 128 words accessible through a command sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
■ Sector Architecture
— Banks A and D each contain both 4 Kword sectors and 32
Kword sectors; Banks B and C contain ninety-six 32 Kword
sectors
— Sixteen 4 Kword boot sectors
Half of the boot sectors are at the top of the address range;
half are at the bottom of address range
■ Minimum 1 million erase cycle guarantee per sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ 80-ball FBGA package (128 Mb) or 64-ball FBGA (64 Mb)
package
PERFORMANCE CHARCTERISTICS
■ Read access times at 75/66/54 MHz (CL=30 pF)
— Burst access times of 9.3/11/13.5 ns at industrial
temperature range
— Synchronous latency of 49/56/69 ns
— Asynchronous random access times of 45/50/55 ns
■ Power dissipation (typical values, CL = 30 pF)
— Burst Mode Read: 10 mA
— Simultaneous Operation: 25 mA
— Program/Erase: 15 mA
— Standby mode: 0.2 µA
HARDWARE FEATURES
■ Handshaking feature
— Provides host system with minimum possible latency by
monitoring RDY
— Reduced Wait-state handshaking option further reduces
initial access cycles required for burst accesses beginning on
even addresses
■ Hardware reset input (RESET#)
— Hardware method to reset the device for reading array data
■ WP# input
— Write protect (WP#) function allows protection of the four
highest and four lowest 4 kWord boot sectors, regardless of
sector protect status
■ Persistent Sector Protection
— A command sector protection method to lock combinations of
individual sectors and sector groups to prevent program or
erase operations within that sector
— Sectors can be locked and unlocked in-system at VCC level
■ Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
■ ACC input: Acceleration function reduces programming
time; all sectors locked when ACC = VIL
■ CMOS compatible inputs, CMOS compatible outputs
■ Low VCC write inhibit
SOFTWARE FEATURES
■ Supports Common Flash Memory Interface (CFI)
■ Software command set compatible with JEDEC 42.4
standards
— Backwards compatible with Am29F and Am29LV families
■ Data# Polling and toggle bits
— Provides a software method of detecting program and erase
operation completion
■ Erase Suspend/Resume
— Suspends an erase operation to read data from, or program
data to, a sector that is not being erased, then resumes the
erase operation
■ Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
■ Burst Suspend/Resume
— Suspends a burst operation to allow system use of the
address and data bus, than resumes the burst at the previous
state
The Am29BDS640H has been retired and is not recommended for designs. For new designs, S29WS064K supersedes Am29BDS640H. Please refer to the S29WS-K family data sheet for
specifications and ordering information. The Am29BDS128H is available and is not affected by this revision.


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44  45  46  47  48  49  50  51  52  53  54  55  56  57  58  59  60  61  62  63  64  65  66  67  68  69  70  71  72  73  74  75  76  77  78  79  80  81  82  83  84  85  86  87  88  89 


데이터시트 Download

Go To PDF Page


링크 URL



Privacy Policy
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn