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AM29PDS322DT12 데이터시트(PDF) 49 Page - SPANSION |
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49 / 51 page December 4, 2006 23569A5 Am29PDS322D 47 D A TA SH EET ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 2.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90 °C, V CC = 1.8 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except VCC. Test conditions: VCC = 1.8 V, one pin at a time. DATA RETENTION Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 1 10 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 93 sec Word Program Time 16 360 µs Excludes system level overhead (Note 5) Accelerated Word Program Time 5 µs Chip Program Time (Note 3) 20 100 sec Description Min Max Input voltage with respect to V SS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V VCC Current –100 mA +100 mA Parameter Description Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C10 Years 125 °C20 Years |
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