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AM29LV641MH101EI 데이터시트(HTML) 52 Page - SPANSION

부품명 AM29LV641MH101EI
상세내용  64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
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AM29LV641MH101EI 데이터시트(HTML) 52 Page - SPANSION

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Am29LV641MH/L
December 21, 2005
DA TA SH EET
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words programmed.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
5. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
6. AC Specifications listed are tested with V
IO = VCC. Contact AMD for information on AC operation with VIO VCC.
7. When using the program suspend/resume feature, if the suspend command is issued within t
POLL, tPOLL must be fully
re-applied upon resuming the programming operation. If the suspend command is issued after t
POLL, tPOLL is not required
again prior to reading the status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
352
µs
Effective Word Program Time, using the Write
Buffer (Notes 2, 4)
Typ
22
µs
Effective Accelerated Word Program Time, using
the Write Buffer (Notes 2, 4)
Typ
17.6
µs
Single Word Program Operation (Note 2, 5)
Typ
100
µs
Accelerated Single Word Programming Operation
(Note 2, 5)
Typ
90
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
RH
Reset High Time Before Write (Note 1)
Min
50
ns
t
POLL
Program Valid Before Status Polling (Note 7)
Max
4
µs


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