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AM49LV4608MT15IT 데이터시트(PDF) 47 Page - SPANSION |
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AM49LV4608MT15IT 데이터시트(HTML) 47 Page - SPANSION |
47 / 63 page November 5, 2003 Am49LV6408M 45 ADV ANCE I N FO RMAT I O N AC Characteristics Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. 3. For 1–16 words programmed. 4. Effective write buffer specification is based upon a 16-word write buffer operation. 5. Word programming specification is based upon a single word programming operation not utilizing the write buffer. Parameter Speed Options JEDEC Std. Description 10, 15 11 Unit t AVAV t WC Write Cycle Time (Note 1) Min 100 110 ns t AVWL t AS Address Setup Time Min 0 ns t ASO Address Setup Time to OE# low during toggle bit polling Min 15 ns t WLAX t AH Address Hold Time Min 45 ns t AHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns t DVWH t DS Data Setup Time Min 45 ns t WHDX t DH Data Hold Time Min 0 ns t OEPH Output Enable High during toggle bit polling Min 20 ns t GHWL t GHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t ELWL t CS CE# Setup Time Min 0 ns t WHEH t CH CE# Hold Time Min 0 ns t WLWH t WP Write Pulse Width Min 35 ns t WHDL t WPH Write Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 352 µs Effective Write Buffer Program Operation (Notes 2, 4) Per Word Typ 22 µs Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Per Word Typ 17.6 µs Single Word/Byte Program Operation (Note 2, 5) Word Typ 100 Single Word/Byte Accelerated Programming Operation (Note 2, 5) Word Typ 90 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec t VHH V HH Rise and Fall Time (Note 1) Min 250 ns t VCS V CC Setup Time (Note 1) Min 50 µs t BUSY WE# High to RY/BY# Low Min 100 110 ns |
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