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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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S71AL016M 데이터시트(PDF) 65 Page - SPANSION |
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S71AL016M 데이터시트(HTML) 65 Page - SPANSION |
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65 / 68 page  February 23, 2005 S71AL016M_M0_A0 S71AL016M 65 Advance I n f o rmatio n Notes: 1. High-Z and Low-Z parameters are characterized and are not 100% tested. 2. The internal write time of the memory is defined by the overlap of WE#, CE#1 = VIL, CE2 = VIH, BHE and/or BLE =VIL. All signals must be Active to initiate a write and any of these signals can terminate a write by going Inactive. The data input set- up and hold timing should be referenced to the edge of the signal that terminates write. 3. Data I/O is high impedance if OE# ≥ VIH. 4. If Chip Enable goes Inactive simultaneously with WE# = High, the output remains in a high-impedance state. 5. During the Don’t Care period in the Data I/O waveform, the I/Os are in output state and input signals should not be applied. Figure 27. Write Cycle 2 (CE#1 or CE2 Controlled) t HD t SD tPWE t HA t AW t SCE t WC t HZOE ADDRESS CE2 DATA I/O DON’T CARE t BW tSA VALID DATA CE#1 WE# BHE#/BLE# OE# |
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