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S71GL512NB0 데이터시트(PDF) 53 Page - SPANSION |
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S71GL512NB0 데이터시트(HTML) 53 Page - SPANSION |
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53 / 147 page  June 14, 2004 S29GLxxxN_00_A4 S29GLxxxN MirrorBitTM Flash Family 53 Ad vance Info rmat i o n than once into the buffer, the final data loaded for that address will be programmed. Once the specified number of write buffer locations have been loaded, the system must then write the Program Buffer to Flash command at the sector address. Any other address and data combination aborts the Write Buffer Programming oper- ation. The device then begins programming. Data polling should be used while monitoring the last address location loaded into the write buffer. DQ7, DQ6, DQ5, and DQ1 should be monitored to determine the device status during Write Buffer Programming. The write-buffer programming operation can be suspended using the standard program suspend/resume commands. Upon successful completion of the Write Buffer Programming operation, the device is ready to execute the next command. The Write Buffer Programming Sequence can be aborted in the following ways: Load a value that is greater than the page buffer size during the Number of Locations to Program step. Write to an address in a sector different than the one specified during the Write-Buffer-Load command. Write an Address/Data pair to a different write-buffer-page than the one se- lected by the Starting Address during the write buffer data loading stage of the operation. Write data other than the Confirm Command after the specified number of data load cycles. The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset com- mand sequence must be written to reset the device for the next operation. Note that the full 3-cycle Write-to-Buffer-Abort Reset command sequence is required when using Write-Buffer-Programming features in Unlock Bypass mode. Write buffer programming is allowed in any sequence. Note that the Secured Sil- icon sector, autoselect, and CFI functions are unavailable when a program operation is in progress. This flash device is capable of handling multiple write buffer programming operations on the same write buffer address range without intervening erases. For applications requiring an excessive number of such re- peated write buffer programming operations, please contact your local Spansion representative. Any bit in a write buffer address range cannot be pro- grammed from “0” back to a “1.” Attempting to do so may cause the device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Accelerated Program The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically en- ters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. WP# has an internal pullup; when unconnected, WP# is at VIH. Figure 3 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations–“AC Characteristics” section on page 80 section for pa- rameters, and Figure 14 for timing diagrams. |
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