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S71GLXXXNC0 데이터시트(HTML) 96 Page - SPANSION

부품명 S71GLXXXNC0
상세내용  Stacked Multi-chip Product (MCP)
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S71GLXXXNC0 데이터시트(HTML) 96 Page - SPANSION

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96
S29GLxxxN MirrorBitTM Flash Family
S29GLxxxN_MCP_A1 December 15, 2004
Advan ce
In form ati o n
AC Characteristics
Erase and Program Operations–S29GL128N, S29GL256N, S29GL512N
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100 ns, and 110 ns speed options are tested with VIO = VCC
= 3 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
Parameter
Speed Options
JEDEC
Std.
Description
90
100
110
110
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle
bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH CE# High during toggle bit polling
Min
20
tOEPH Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH Write Pulse Width High
Min
30
ns
tWHWH1 tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
µs
15
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
µs
13.5
Program Operation (Note 2)
Word
Typ
µs
60
Accelerated Programming
Operation (Note 2)
Word
Typ
µs
54
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tBUSY Erase/Program Valid to RY/BY# Delay
Min
90
ns


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