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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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S29CD032G0JQAI210 데이터시트(PDF) 27 Page - SPANSION |
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S29CD032G0JQAI210 데이터시트(HTML) 27 Page - SPANSION |
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27 / 87 page  November 14, 2005 S29CD-G_00_B0 S29CD-G Flash Family 25 Pr el im i n a r y An erase operation can erase one sector, multiple sectors, or the entire device. Table 23, Table 24, Table 25, and Table 26 indicate the address space that each sector occupies. A sector address consists of the address bits required to uniquely select a sector. See Command Definitions on page 42 for details on erasing a sector or the entire chip, or suspending/resuming the erase operation. When in Synchronous read mode configuration, the device is able to perform both asynchronous and synchronous write operations. CLK and ADV# address latch is supported in synchronous pro- gramming mode. During a synchronous write operation, to write a command or command sequence, (which includes programming data to the device and erasing sectors of memory), the system must drive ADV# and CE# to VIL, and OE# to VIH when providing an address to the de- vice, and drive WE# and CE# to VIL, and CE# to VIH, when writing commands or data. Accelerated Program and Erase Operations The device offers accelerated program/erase operations through the ACC pin. When the system asserts VHH (12V) on the ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence to do acceler- ated programming. The device uses the higher voltage on the ACC pin to accelerate the operation. A sector that is being protected with the WP# pin is protected during accelerated program or Erase. Note: The ACC pin must not be at VHH during any operation other than accelerated programming, or device damage can result. Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. See Autoselect Mode on page 26 and Autoselect Command on page 43 for more information. Automatic Sleep Mode (ASM) The automatic sleep mode minimizes Flash device energy consumption. While in asynchronous mode, the device automatically enables this mode when addresses remain stable for tACC + 60 ns. The automatic sleep mode is independent of the CE#, WE# and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, out- put data is latched and always available to the system. While in synchronous mode, the device automatically enables this mode when either the first active CLK level is greater than tACC or the CLK runs slower than 5 MHz. Note that a new burst operation is required to provide new data. ICC8 in DC Characteristics on page 64 represents the automatic sleep mode current specification. Standby Mode When the system is not responding or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# inputs are both held at Vcc ± 0.2 V. The device requires standard access time (tCE) for read access, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC5 in DC Characteristics on page 64 represents the standby current specification. Caution: entering the standby mode via the RESET# pin also resets the device to the read mode and floats the data I/O pins. Furthermore, entering ICC7 during a program or erase operation |
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