S29CD032J0JQFI033 datasheet(33/76 Pages) SPANSION

부품명	S29CD032J0JQFI033

상세설명	32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O

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September 27, 2006 S29CD-J_CL-J_00_B1

S29CD-J & S29CL-J Flash Family

31

Da ta

Shee t

(Prelim i nar y )

During the unlock bypass mode only the Read, Unlock Bypass Program and Unlock Bypass Reset

commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass

reset command sequence, which returns the device to read mode.

Notes

1. The Unlock Bypass Command is ignored if the Secured Silicon sector is enabled.

2. Unlike the standard program or erase commands, there is no Unlock Bypass Program/Erase

Suspend or Program/Erase Resume command.

8.7.8

Simultaneous Read/Write

The simultaneous read/write feature allows the host system to read data from one bank of memory while

programming or erasing in another bank of memory.

The Simultaneous Read/Write feature can be used to perform the following:

Programming in one bank, while reading in the other bank

Erasing in one bank, while reading in the other bank

Programming a PPB, while reading data from the large bank or status from the small bank

Erasing a PBB, while reading data from the large bank or status from the small bank

Any of the above situations while in the Secured Silicon Sector Mode

The Simultaneous R/W feature can not be performed during the following modes:

CFI Mode

Password Program operation

Password Verify operation

As an alternative to using the Simultaneous Read/Write feature, the user may also suspend an erase or

program operation to read in another location within the same bank (except for the sector being erased).

8.8

Write Operation Status

The device provides several bits to determine the status of a program or erase operation. The following

subsections describe the function of DQ7, DQ6, DQ2, DQ5, DQ3, and RY/BY#.

8.8.1

DQ7: Data# Polling

The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm

is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising

edge of the final WE# pulse in the command sequence. Note that Data# Polling returns invalid data for the

address being programmed or erased.

During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum

programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the

Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system

must provide the program address to read valid status information on DQ7.

If a program address falls within a protected sector, Data# polling on DQ7 is active for approximately 1 µs,

then that bank returns to the read mode without programming the sector. If an erase address falls within a

protected sector, Toggle BIT (DQ6) is active for 150 s, then the device returns to the read mode without

erasing the sector. Please note that Data# polling (DQ7) may give misleading status when an attempt is

made to program or erase a protected sector.

During the Embedded Erase Algorithm, Data# polling produces a “0” on DQ7. When the Embedded Erase

algorithm is complete Data# Polling produces a “1” on DQ7. The system must provide an address within any

of the sectors selected for erasure to read valid status information on DQ7.

In asynchronous mode, just prior to the completion of an Embedded Program or Erase operation, DQ7 may

change asynchronously with DQ6-DQ0 while Output Enable (OE#) is asserted low. That is, the device may

change from providing status information to valid data on DQ7. Depending on when the system samples the

DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase

유사한 부품 번호 - S29CD032J0JQFI033

제조업체	부품명	데이터시트	상세설명
SPANSION	S29CD032J	2Mb / 81P	32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O?
Cypress Semiconductor	S29CD032J	1Mb / 74P	32/16 Mbit, 2.6/3.3 V, Dual Boot,Simultaneous Read/Write, Burst Flash

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유사한 설명 - S29CD032J0JQFI033

제조업체	부품명	데이터시트	상세설명
SPANSION	S29CD-J	2Mb / 81P	32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O?
	S29CD016J	450Kb / 15P	16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
	S29CD032G	1Mb / 93P	CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
	S29CD-G	1Mb / 87P	32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
	S29CD016G	1Mb / 91P	16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
Advanced Micro Devices	AM29BDS323D	746Kb / 44P	32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Advanced Micro Devices	AM29N323D	824Kb / 48P	32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Cypress Semiconductor	S29CD032J	1Mb / 74P	32/16 Mbit, 2.6/3.3 V, Dual Boot,Simultaneous Read/Write, Burst Flash
Advanced Micro Devices	AM29DL640D	1Mb / 54P	64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
SPANSION	S29WS-NL	1Mb / 99P	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

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