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S71WS512NC0BFWE73 데이터시트(HTML) 46 Page - SPANSION

부품명 S71WS512NC0BFWE73
상세내용  Stacked Multi-Chip Product (MCP)
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제조사  SPANSION [SPANSION]
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S71WS512NC0BFWE73 데이터시트(HTML) 46 Page - SPANSION

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S71WS-Nx0 Based MCPs
S71WS-N_01_A4 September 15, 2005
Ad van c e
Inf o rmation
The system may also write the Autoselect command sequence when the device is in Program Sus-
pend mode. The device allows reading Autoselect codes in the suspended sectors, since the codes
are not stored in the memory array. When the device exits the Autoselect mode, the device re-
verts to Program Suspend mode, and is ready for another valid operation. See “Autoselect
Command Sequence” for more information.
After the Program Resume command is written, the device reverts to programming. The system
can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See “Write Operation Status” for more information.
The system must write the Program Resume command (address bits are “don't care”) to exit the
Program Suspend mode and continue the programming operation. Further writes of the Program
Resume command are ignored. Another Program Suspend command can be written after the de-
vice has resumed programming.
The following is a C source code example of using the program suspend function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Program suspend command */
*( (UINT16 *)base_addr + 0x000 ) = 0x00B0;
/* write suspend command
*/
The following is a C source code example of using the program resume function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Program resume command */
*( (UINT16 *)base_addr + 0x000 ) = 0x0030;
/* write resume command
*/
10.5.7
Accelerated Program/Chip Erase
Accelerated single word programming, write buffer programming, sector erase, and chip erase
operations are enabled through the ACC function. This method is faster than the standard chip
program and erase command sequences.
The accelerated chip program and erase functions must not be used more than 10 times
per sector. In addition, accelerated chip program and erase should be performed at room tem-
perature (25
°C ±10°C).
If the system asserts VHH on this input, the device automatically enters the aforementioned Un-
lock Bypass mode and uses the higher voltage on the input to reduce the time required for
program and erase operations. The system can then use the Write Buffer Load command se-
quence provided by the Unlock Bypass mode. Note that if a “Write-to-Buffer-Abort Reset” is
required while in Unlock Bypass mode, the full 3-cycle RESET command sequence must be used
to reset the device. Removing VHH from the ACC input, upon completion of the embedded pro-
gram or erase operation, returns the device to normal operation.
Sectors must be unlocked prior to raising ACC to VHH.
The ACC pin must not be at VHH for operations other than accelerated programming and ac-
celerated chip erase, or device damage may result.
Table 10.18 Software Functions and Sample Code
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
Bank Address
00B0h
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
Bank Address
0030h


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