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BLF247B 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BLF247B 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 16 page August 1994 3 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF247B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section VDS drain-source voltage (DC) − 65 V VGS gate-source voltage −±20 V ID drain current (DC) − 13 A Ptot total power dissipation up to Tmb = 25 °C; total device; both sections equally loaded − 280 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − +200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 0.63 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.15 K/W Fig.2 DC SOAR. Total device; both sections equally loaded. (1) Current in this area may be limited by RDSon. (2) Tmb =25 °C. 10 2 MBD287 10 1 1 10 2 10 I D (A) V (V) DS (1) (2) Fig.3 Power derating curves. Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch. 040 400 300 100 0 200 MBD288 80 120 160 T ( C) h Ptot (W) o (2) (1) |
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