August 1994

3

Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF247B

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor section

drain-source voltage (DC)

−

65

V

gate-source voltage

−±20

V

drain current (DC)

−

13

A

total power dissipation

both sections equally loaded

−

280

W

storage temperature

−65

+150

°C

operating junction temperature

−

+200

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to

mounting base

total device; both sections equally

loaded

0.63

K/W

thermal resistance from mounting base

to heatsink

total device; both sections equally

loaded

0.15

K/W

Fig.2 DC SOAR.

Total device; both sections equally loaded.

MBD287

10

1

1

10

I D

(A)

V

(V)

DS

(1)

(2)

Fig.3 Power derating curves.

Total device; both sections equally loaded.

(1) Continuous operation.

(2) Short-time operation during mismatch.

040

400

300

100

0

200

MBD288

80

120

160

T ( C)

h

Ptot

(W)

o

(2)

(1)