PAGE . 1

STAD-JUN.27.2006

PJP75N75

FEATURES

• R

• R

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Converters and Power Motor Controls

• Fully Characterized Avalanche Voltage and Current

• Pb free product : 99% Sn above can meet RoHS environment

substance directive request

MECHANICAL DATA

• Case: TO-220AB Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : P75N75

75V N-Channel Enhancement Mode MOSFET

Maximum RATINGS and Thermal Characteristics (T

Note: 1. Maximum DC current limited by the package

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

PIN Assignment

1. Gate

2. Drain

3. Source

Gate

Drain

Source

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T

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