전자부품 데이터시트 검색엔진 |
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IRHM57Z60 데이터시트(PDF) 2 Page - International Rectifier |
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IRHM57Z60 데이터시트(HTML) 2 Page - International Rectifier |
2 / 8 page IRHM57Z60 Pre-Irradiation 2 www.irf.com Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.028 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.0095 Ω VGS = 12V, ID = 35A Resistance VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 45 — — S ( )VDS > 15V, IDS = 35A ➃ IDSS Zero Gate Voltage Drain Current — — 10 VDS= 24V ,VGS=0V —— 25 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 200 VGS =12V, ID = 35A Qgs Gate-to-Source Charge — — 55 nC VDS = 15V Qgd Gate-to-Drain (‘Miller’) Charge — — 40 td(on) Turn-On Delay Time — — 35 VDD = 15V, ID = 35A tr Rise Time — — 125 VGS =12V, RG = 2.35Ω td(off) Turn-Off Delay Time — — 80 tf Fall Time — — 50 LS + LD Total Inductance — 6.8 — Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance — 9720 — VGS = 0V, VDS = 25V Coss Output Capacitance — 4230 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 56 — nA ➃ nH ns µA Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 0.50 RthCS Case-to-Sink — 0.21 — °C/W RthJA Junction-to-Ambient — — 48 Typical socket mount Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 35* ISM Pulse Source Current (Body Diode) ➀ — — 140 VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 35A, VGS = 0V ➃ trr Reverse Recovery Time — — 153 ns Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 324 nC VDD ≤ 25V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A * Current is limited by internal wire diameter |
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