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IRFP150VPBF λ°μ΄ν„°μ‹œνŠΈ(HTML) 2 Page - International Rectifier

λΆ€ν’ˆλͺ… IRFP150VPBF
μƒμ„Έλ‚΄μš©  HEXFET Power MOSFET
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IRFP150VPBF λ°μ΄ν„°μ‹œνŠΈ(HTML) 2 Page - International Rectifier

   
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IRFP150VPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25Β°C, IS = 28A, VGS = 0V
Β„
trr
Reverse Recovery Time
–––
140
220
ns
TJ = 25Β°C, IF = 28A
Qrr
Reverse Recovery Charge
–––
670 1010
nC
di/dt = 100A/Β΅s
Β„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
47
230
A
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Β‚ Starting T
J = 25Β°C, L = 0.70mH, RG = 25Ω,
IAS = 28A, VGS=10V (See Figure 12).
Βƒ I
SD ≀ 28A, di/dt ≀ 380A/Β΅s, VDD ≀ V(BR)DSS,
TJ ≀ 175Β°C.
Notes:
Β„ Pulse width ≀ 400Β΅s; duty cycle ≀ 2%.
Β… This is a typical value at device destruction and represents
operation outside rated limits.
Β† This is a calculated value limited to TJ = 175Β°C .
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250Β΅A
βˆ†V(BR)DSS/βˆ†TJ Breakdown Voltage Temp. Coefficient
–––
0.13
–––
V/Β°C
Reference to 25Β°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
24
m
Ω
VGS = 10V, ID =28A
Β„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250Β΅A
gfs
Forward Transconductance
32
–––
–––
S
VDS = 25V, ID = 28A
Β„
–––
–––
25
Β΅A
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150Β°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
130
ID = 28A
Qgs
Gate-to-Source Charge
–––
–––
26
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
43
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
12
–––
VDD = 50V
tr
Rise Time
–––
58
–––
ID = 28A
td(off)
Turn-Off Delay Time
–––
45
–––
RG = 2.5Ω
tf
Fall Time
–––
47
–––
VGS = 10V, See Fig. 10
Β„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
3130 –––
VGS = 0V
Coss
Output Capacitance
–––
410
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
72
–––
pF
Ζ’ = 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy
Β‚
––– 1060
Β…280Β† mJ
IAS = 28A, L = 0.70mH
nH
Electrical Characteristics @ TJ = 25Β°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current


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