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XN05501 데이터시트(PDF) 1 Page - Panasonic Semiconductor

부품명 XN05501
부품 상세설명  Silicon NPN epitaxial planar type For general amplification
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제조업체  PANASONIC [Panasonic Semiconductor]
홈페이지  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

XN05501 데이터시트(HTML) 1 Page - Panasonic Semiconductor

  XN05501 Datasheet HTML 1Page - Panasonic Semiconductor XN05501 Datasheet HTML 2Page - Panasonic Semiconductor XN05501 Datasheet HTML 3Page - Panasonic Semiconductor  
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Publication date: August 2003
SJJ00089BED
Composite Transistors
XN05501 (XN5501)
Silicon NPN epitaxial planar type
For general amplification
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD0601A (2SD601A) × 2
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Internal Connection
Marking Symbol: 5L
5
4
3
2
1
6
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 060
V
Collector-emitter voltage (Base open)
VCEO
IC
= 2 mA, I
B
= 050
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 10 V, I
B
= 0
100
µA
Forward current transfer ratio
hFE
VCE = 10 V, IC = 2 mA
160
460
hFE ratio *
hFE(Small/
VCE = 10 V, IC = 2 mA
0.50
0.99
Large)
Collector-emitter saturation voltage
VCE(sat)
IC = 100 mA, IB = 10 mA
0.1
0.3
V
Transition frequency
fT
VCB
= 10 V, I
E
= −2 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
1: Collector (Tr1)
4: Base (Tr2)
2: Emitter (Tr2)
5: Base (Tr1)
3: Collector (Tr2)
6: Emitter (Tr1)
EIAJ: SC-74
Mini6-G1 Package
2.90
1.9±0.1
0.16
+0.10
–0.06
(0.95)
0.30
+0.10
–0.05
0.50
+0.10
–0.05
(0.95)
6
5
4
1
32
+0.20
–0.05
10˚


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