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IRL3502SPBF 데이터시트(HTML) 2 Page - International Rectifier

부품명 IRL3502SPBF
상세내용  HEXFET Power MOSFET
Download  8 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRL3502SPBF 데이터시트(HTML) 2 Page - International Rectifier

   
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IRL3502SPbF
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.019 –––
V/°C Reference to 25°C, ID = 1.0mA…
–––
––– 0.008
VGS = 4.5V, ID = 64A „
–––
––– 0.007
VGS = 7.0V, ID = 64A „
VGS(th)
Gate Threshold Voltage
0.70 ––– –––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
77
––– –––
S
VDS = 10V, ID = 64A…
–––
–––
25
µA
VDS = 20V, VGS = 0V
–––
––– 250
VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
nA
VGS = 10V
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -10V
Qg
Total Gate Charge
–––
––– 110
ID = 64A
Qgs
Gate-to-Source Charge
–––
–––
27
nC
VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
39
VGS = 4.5V, See Fig. 6 „…
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 10V
tr
Rise Time
–––
140 –––
ns
ID = 64A
td(off)
Turn-Off Delay Time
–––
96
–––
RG = 3.8Ω, VGS = 4.5V
tf
Fall Time
–––
130 –––
RD = 0.15Ω, „…
Between lead,
and center of die contact
Ciss
Input Capacitance
––– 4700 –––
VGS = 0V
Coss
Output Capacitance
––– 1900 –––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
640 –––
ƒ = 1.0MHz, See Fig. 5…
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ ISD ≤ 64A, di/dt ≤ 86A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting TJ = 25°C, L = 190µH
RG = 25Ω, IAS = 64A.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) …
––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.3
V
TJ = 25°C, IS = 64A, VGS = 0V „
trr
Reverse Recovery Time
–––
87
130
ns
TJ = 25°C, IF = 64A
Qrr
Reverse Recovery Charge
––– 200 310
nC
di/dt = 100A/µs „…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
110†
420
A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Static Drain-to-Source On-Resistance
IGSS
nH
LS
Internal Source Inductance
––– 7.5
–––
IDSS
Drain-to-Source Leakage Current
… Uses IRL3502 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
† Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4


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