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MAC8S 데이터시트(PDF) 6 Page - ON Semiconductor

부품명 MAC8S
부품 상세설명  Sensitive Gate Triacs Silicon Bidirectional Thyristors
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MAC8S 데이터시트(HTML) 6 Page - ON Semiconductor

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Figure 13. Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(−)
TJ, Junction Temperature (°C)
RGK, GATE−MT1 RESISTANCE (OHMS)
Figure 14. Typical Exponential Static dv/dt Versus
Gate−MT1 Resistance, MT2(−)
300
250
200
150
100
100
300
500
700
900
1000
200
400
600
800
TJ = 110°C
VPK = 400 V
600 V
800 V
RG − MT1 = 510 W
VPK = 400 V
600 V
800 V
100
105
110
200
150
100
50
350
300
250
(di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
tw
f =
1
2 tw
(di/dt)c =
6f ITM
1000
VDRM
Figure 15. Critical Rate of Rise of
Commutating Voltage
1
5
10
15
20
25
30
100
10
1
110
°C
90
°C
100
°C
VPK = 400 V
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
LL
1N4007
200 V
+
MEASURE
I
CHARGE
CONTROL
CHARGE
TRIGGER
NON-POLAR
CL
51
W
MT2
MT1
1N914
G
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
RS
ADJUST FOR
di/dt(c)
CS


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