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MAC8S 데이터시트(PDF) 6 Page - ON Semiconductor |
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MAC8S 데이터시트(HTML) 6 Page - ON Semiconductor |
6 / 7 page MAC8SD, MAC8SM, MAC8SN http://onsemi.com 6 Figure 13. Typical Exponential Static dv/dt Versus Junction Temperature, MT2(−) TJ, Junction Temperature (°C) RGK, GATE−MT1 RESISTANCE (OHMS) Figure 14. Typical Exponential Static dv/dt Versus Gate−MT1 Resistance, MT2(−) 300 250 200 150 100 100 300 500 700 900 1000 200 400 600 800 TJ = 110°C VPK = 400 V 600 V 800 V RG − MT1 = 510 W VPK = 400 V 600 V 800 V 100 105 110 200 150 100 50 350 300 250 (di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) tw f = 1 2 tw (di/dt)c = 6f ITM 1000 VDRM Figure 15. Critical Rate of Rise of Commutating Voltage 1 5 10 15 20 25 30 100 10 1 110 °C 90 °C 100 °C VPK = 400 V Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c LL 1N4007 200 V + MEASURE I − CHARGE CONTROL CHARGE TRIGGER NON-POLAR CL 51 W MT2 MT1 1N914 G 200 VRMS ADJUST FOR ITM, 60 Hz VAC Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. RS ADJUST FOR di/dt(c) CS |
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