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MAC8S 데이터시트(PDF) 2 Page - ON Semiconductor |
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2 / 7 page MAC8SD, MAC8SM, MAC8SN http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Case Junction−to−Ambient RqJC RqJA 2.2 62.5 °C/W Maximum Lead Temperature for Soldering Purposes 1/8 ″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C IDRM, IRRM − − − − 0.01 2.0 mA ON CHARACTERISTICS Peak On-State Voltage (Note ) (ITM = 11A) VTM − − 1.85 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT − − − 2.0 3.0 3.0 5.0 5.0 5.0 mA Holding Current (VD = 12V, Gate Open, Initiating Current = 150mA) IH − 3.0 10 mA Latching Current (VD = 24V, IG = 5mA) MT2(+), G(+) MT2(−), G(−) MT2(+), G(−) IL − − − 5.0 10 5.0 15 20 15 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGT 0.45 0.45 0.45 0.62 0.60 0.65 1.5 1.5 1.5 V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V m/sec, Gate Open, TJ = 110°C, f = 500 Hz, Snubber: CS = 0.01 mF, RS =15 W, See Figure 16.) di/dt(c) 8.0 10 − A/ms Critical Rate of Rise of Off-State Voltage (VD = Rate VDRM, Exponential Waveform, RGK = 510 W, TJ = 110°C) dv/dt 25 75 − V/ ms 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. |
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