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MCR12L 데이터시트(HTML) 1 Page - ON Semiconductor

부품명 MCR12L
상세내용  Silicon Controlled Rectifiers Reverse Blocking Thyristors
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제조사  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MCR12L 데이터시트(HTML) 1 Page - ON Semiconductor

  MCR12L 데이터시트 HTML 1Page - ON Semiconductor MCR12L 데이터시트 HTML 2Page - ON Semiconductor MCR12L 데이터시트 HTML 3Page - ON Semiconductor MCR12L 데이터시트 HTML 4Page - ON Semiconductor MCR12L 데이터시트 HTML 5Page - ON Semiconductor  
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© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
1
Publication Order Number:
MCR12L/D
MCR12LD, MCR12LM,
MCR12LN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
Blocking Voltage to 800 Volts
On−State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability − 100 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
High Immunity to dv/dt − 100 V/msec Minimum at 125°C
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR12LD
MCR12LM
MCR12LN
VDRM,
VRRM
400
600
800
V
On-State RMS Current
(180
° Conduction Angles; TC = 80°C)
IT(RMS)
12
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
ITSM
100
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
41
A2sec
Forward Peak Gate Power
(Pulse Width
≤ 1.0 ms, TC = 80°C)
PGM
5.0
W
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width
≤ 1.0 ms, TC = 80°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to 125
°C
Storage Temperature Range
Tstg
−40 to 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
TO−220AB
CASE 221A−09
STYLE 3
1
http://onsemi.com
A
= Assembly Location
Y
= Year
WW
= Work Week
x
= D, M, or N
G
= Pb−Free Package
AKA
= Diode Polarity
2
3
Device
Package
Shipping
ORDERING INFORMATION
MCR12LD
TO−220AB
50 Units / Rail
MCR12LN
TO−220AB
50 Units / Rail
MCR12LDG
TO−220AB
(Pb−Free)
50 Units / Rail
MCR12LNG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
MCR12LM
TO−220AB
50 Units / Rail
MCR12LMG
TO−220AB
(Pb−Free)
50 Units / Rail
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
AY WW
MCR12LxG
AKA
MARKING
DIAGRAM


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