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MCR12L 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 MCR12L
부품 상세설명  Silicon Controlled Rectifiers Reverse Blocking Thyristors
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제조업체  ONSEMI [ON Semiconductor]
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MCR12L 데이터시트(HTML) 2 Page - ON Semiconductor

  MCR12L Datasheet HTML 1Page - ON Semiconductor MCR12L Datasheet HTML 2Page - ON Semiconductor MCR12L Datasheet HTML 3Page - ON Semiconductor MCR12L Datasheet HTML 4Page - ON Semiconductor MCR12L Datasheet HTML 5Page - ON Semiconductor  
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MCR12LD, MCR12LM, MCR12LN
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
2.2
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
TJ = 25°C
(VD = Rated VDRM and VRRM; Gate Open)
TJ = 125°C
IDRM,
IRRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2)
(ITM = 24 A)
VTM
2.2
V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W)
IGT
2.0
4.0
8.0
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
IH
4.0
10
20
mA
Latch Current (VD = 12 V, Ig = 20 mA)
IL
6.0
12
30
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 W)
VGT
0.5
0.65
0.8
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
100
250
V/
ms
Critical Rate of Rise of On−State Current
IPK = 50 A; Pw = 40
msec; diG/dt = 1 A/msec, Igt = 50 mA
di/dt
50
A/
ms
2. Indicates Pulse Test: Pulse Width
v1.0 ms, Duty Cycle v2%.


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