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MMT05B350T3 데이터시트(HTML) 1 Page - ON Semiconductor

부품명 MMT05B350T3
상세내용  Thyristor Surge Protectors High Voltage Bidirectional TSPD
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제조사  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMT05B350T3 데이터시트(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 2
1
Publication Order Number:
MMT05B350T3/D
MMT05B350T3
Preferred Devices
Product Preview
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled
Temperature Environments
The MMT05B350T3 is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 and
K.21, IEC 950, UL 1459 and 1950 and FCC Part 68
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Recognized − File #E210057
Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Off−State Voltage − Maximum
VDM
300
V
Maximum Pulse Surge Short Circuit Current
Non−Repetitive Double Exponential Decay
Waveform (−25
°C Initial Temperature)
(Notes 1 and 2)
2 x 10
msec
8 x 20
msec
10 x 160
msec
10 x 360
msec
10 x 560
msec
10 x 700
msec
10 x 1000
msec
IPPS1
IPPS2
IPPS3
IPPS4
IPPS5
IPPS6
IPPS7
±150
±150
±100
±100
±70
±70
±50
A(pk)
Non−Repetitive Peak On−State Current
60 Hz Full Sign Wave
ITSM
32
A(pk)
Maximum Non−Repetitive Rate of Change of
On−State Current Exponential Waveform, < 100 A
di/dt
"300
A/
ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
BIDIRECTIONAL TSPD
50 AMP SURGE, 350 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MMT05B350T3
SMB
12 mm Tape & Reel
(2.5 K/Reel)
MT1
MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
(
)
MARKING DIAGRAMS
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMT05B350T3G
SMB
(Pb−Free)
12 mm Tape & Reel
(2.5 K/Reel)
A
= Assembly Location
Y
= Year
WW
= Work Week
RPBM = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
AYWW
RPBM
G
G


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