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MMT05B350T3 데이터시트(HTML) 2 Page - ON Semiconductor

부품명 MMT05B350T3
상세내용  Thyristor Surge Protectors High Voltage Bidirectional TSPD
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제조사  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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MMT05B350T3 데이터시트(HTML) 2 Page - ON Semiconductor

  MMT05B350T3 데이터시트 HTML 1Page - ON Semiconductor MMT05B350T3 데이터시트 HTML 2Page - ON Semiconductor MMT05B350T3 데이터시트 HTML 3Page - ON Semiconductor MMT05B350T3 데이터시트 HTML 4Page - ON Semiconductor MMT05B350T3 데이터시트 HTML 5Page - ON Semiconductor  
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MMT05B350T3
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THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range Blocking or Conducting State
TJ1
− 40 to + 125
°C
Overload Junction Temperature − Maximum Conducting State Only
TJ2
+ 175
°C
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/
ms, ISC = 1.0 A, Vdc = 1000 V)
(+65
°C)
V(BO)
400
412
V
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kW, t = 0.5 cycle) (Note 3)
(+65
°C)
V(BO)
400
412
V
Breakover Voltage Temperature Coefficient
dV(BO)/dTJ
0.12
V/
°C
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
V(BR)
350
V
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
ID1
ID2
2.0
5.0
mA
On−State Voltage (IT = 1.0 A)
(PW
≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
VT
1.6
3.0
V
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW)
Both polarities
IBO
475
mA
Holding Current (Both polarities)
(Note 3)
VS = 500 V; IT (Initiating Current) = "1.0 A
(+65
°C)
IH
150
130
270
mA
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
dv/dt
2000
V/
ms
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
CO
14
27
18
30
pF
3. Measured under pulse conditions to reduce heating.
+ Current
+ Voltage
VTM
V(BO)
I(BO)
ID2
ID1
VD1
VD2 V(BR)
IH
Symbol
Parameter
ID1, ID2
Off State Leakage Current
VD1, VD2
Off State Blocking Voltage
VBR
Breakdown Voltage
VBO
Breakover Voltage
IBO
Breakover Current
IH
Holding Current
VTM
On State Voltage
Voltage Current Characteristic of TSPD
(Bidirectional Device)


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