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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MMT10B350T3 데이터시트(PDF) 2 Page - ON Semiconductor |
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MMT10B350T3 데이터시트(HTML) 2 Page - ON Semiconductor |
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2 / 5 page  MMT10B350T3 http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State TJ1 −40 to + 125 °C Overload Junction Temperature − Maximum Conducting State Only TJ2 + 175 °C Maximum Lead Temperature for Soldering Purposes 1/8 ″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Symbol Min Typ Max Unit Breakover Voltage (Both polarities) (dv/dt = 100 V/ ms, ISC = 1.0 A, Vdc = 1000 V) (+65 °C) V(BO) − − − − 400 412 V Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kW, t = 0.5 cycle) (Note 3) (+65 °C) V(BO) − − − − 400 412 V Breakover Voltage Temperature Coefficient dV(BO)/dTJ − 0.12 − V/ °C Breakdown Voltage (I(BR) = 1.0 mA) Both polarities V(BR) − 350 − V Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities ID1 ID2 − − − − 2.0 5.0 mA On−State Voltage (IT = 1.0 A) (PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3) VT − 1.82 5.0 V Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW) Both polarities IBO − 475 − mA Holding Current (Both polarities) (Note 3) VS = 500 V; IT (Initiating Current) = "1.0 A IH 150 300 − mA Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR, TJ = 25°C) dv/dt 2000 − − V/ ms Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal) CO − − 40 81 − 85 pF 3. Measured under pulse conditions to reduce heating. + Current + Voltage VTM V(BO) I(BO) ID2 ID1 VD1 VD2 V(BR) IH Symbol Parameter ID1, ID2 Off State Leakage Current VD1, VD2 Off State Blocking Voltage VBR Breakdown Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage Voltage Current Characteristic of TSPD (Bidirectional Device) |
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