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PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (V
F)
1.2
1.4
V
I
F = ±20mA
Reverse Voltage (V
R)
5
V
I
R = 10µA
Reverse Current (I
R)
10
µA
V
R = 4V
Output
Collector-emitter Breakdown (BV
CEO)
35
V
I
C = 0.1mA
Emitter-collector Breakdown (BV
ECO)
6
V
I
E = 10uA
Collector-emitter Dark Current (I
CEO)
100
nA
V
CE = 20V
Coupled
Current Transfer Ratio (CTR)
20
400
%
±1mA I
F , 5V VCE
Collector-emitterSaturationVoltageV
CE (SAT)
0.2
V
±20mA I
F , 1mA IC
Input to Output Isolation Voltage V
ISO
3750
V
RMS
See note 1
5300
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x1010
Ω
V
IO = 500V (note 1)
Output Rise Time
tr
4
18
µs
V
CE = 2V ,
Output Fall Time
tf
3
18
µs
I
C = 2mA, RL = 100Ω
ELECTRICAL CHARACTERISTICS ( T
A = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs)
260°C
INPUT DIODE
Forward Current
±50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
35V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.26mW/°C above 25°C)
Note 1
Measured with input leads shorted together and output leads shorted together.
DB92856l-AAS/A3
22/4/02