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IRL1004S ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
๋ถ€ํ’ˆ๋ช… IRL1004S
์ƒ์„ธ๋‚ด์šฉ  HEXFET Power MOSFET
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IRL1004S ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 5 Page - National Semiconductor (TI)

 
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IRL1004S/1004L
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
Fig 10b. Switching Time Waveforms
VDS
Pulse Width
โ‰ค 1 ยตs
Duty Factor
โ‰ค 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-VDD
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
T , Case Temperature ( C)
ยฐ
C
LIMITED BY PACKAGE
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
1
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)


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