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NTLJF3117P 데이터시트(PDF) 1 Page - ON Semiconductor |
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1 / 8 page © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 2 1 Publication Order Number: NTLJF3117P/D NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent Thermal Conduction • 2x2 mm Footprint Same as SC−88 Package Design • Independent Pinout Provides Circuit Design Flexibility • Low Profile (< 0.8 mm) for Easy Fit in Thin Environment • High Current Schottky Diode: 2 A Current Rating • This is a Pb−Free Device Applications • Optimized for Portable Applications like Cell Phones, Digital Cameras, Media Players, etc. • DC−DC Buck Circuit • Li−Ion Battery Applications • Color Display and Camera Flash Regulators MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8.0 V Continuous Drain Current (Note 1) Steady State TA = 25°C ID −3.3 A TA = 85°C −2.4 t ≤ 5 s TA = 25°C −4.1 Power Dissipation (Note 1) Steady State TA = 25°C PD 1.5 W t ≤ 5 s 2.3 Continuous Drain Current (Note 2) Steady State TA = 25°C ID −2.3 A TA = 85°C −1.6 Power Dissipation (Note 2) TA = 25°C PD 0.71 W Pulsed Drain Current tp = 10 ms IDM −20 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS −1.9 A Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. 1 2 3 6 5 4 A N/C D K G S http://onsemi.com −20 V 30 V 135 m W @ −2.5 V 100 m W @ −4.5 V 2.0 A RDS(on) MAX −4.1 A 0.47 V ID MAX (Note 1) V(BR)DSS MOSFET SCHOTTKY DIODE VR MAX IF MAX VF TYP 200 m W @ −1.8 V G S P−CHANNEL MOSFET D K A SCHOTTKY DIODE JH = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) JHM G G 1 2 3 6 5 4 WDFN6 CASE 506AN MARKING DIAGRAM (Top View) 1 See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. ORDERING INFORMATION PIN CONNECTIONS K D |
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