전자부품 데이터시트 검색엔진 |
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TS7920 데이터시트(PDF) 2 Page - Sanyo Semicon Device |
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TS7920 데이터시트(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page TS7920 No.6921-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit DC Current Gain hFE1VCE=5V, IC=0.3A 30 40 50 hFE2VCE=5V, IC=1.5A 10 Collector-to-Emitter Saturation Voltage VCE(sat) IC=2.0A, IB=0.4A 1.0 V Base-to-Emitter Saturation Voltage VBE(sat) IC=2.0A, IB=0.4A 1.5 V Storage Time tstg IC=2.0A, IB1=0.4A, IB2=--0.8A 2.5 µs Fall Time tf IC=2.0A, IB1=0.4A, IB2=--0.8A 0.15 µs Switching Time Test Circuit ITR08010 IC -- VBE Base-to-Emitter Voltage, VBE -- V VCE=5V ITR08011 hFE -- IC Collector Current, IC -- A VCE=5V Ta=120°C 25°C --40°C ITR08008 ITR08009 IC -- VCE Collector-to-Emitter Voltage, VCE -- V IB=0 VCE(sat) -- IC Collector Current, IC -- A IC / IB=5 Ta= --40 °C 25 °C 120°C 0.8A 0.6A 0.4A 0.2A 1.8A 2.0A 1.6A 1.4A 1.2A 1.0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 4 5 3 10 100 35 35 3 5 72 0.1 72 1.0 7 2 3 5 7 5 7 2 3 02468 10 0 2 4 6 8 0.1 23 2 5 35 3 5 7 1.0 77 0.1 1.0 5 3 5 7 7 2 5 3 7 2 RC VOUT 0.9 VOUT VOUT tstg tf 0.1 VOUT IB1 IB1 IB2 VCC IB2 |
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