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IRFP150V 데이터시트(PDF) 1 Page - International Rectifier |
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IRFP150V 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page IRFP150V HEXFET® Power MOSFET 02/03/03 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.1 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance www.irf.com 1 VDSS = 100V RDS(on) = 24mΩ ID = 47A S D G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 packcage because of its isolated mounting hole. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 46 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 32 A IDM Pulsed Drain Current 230 PD @TC = 25°C Power Dissipation 140 W Linear Derating Factor 0.91 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 28 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.8 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) PD - 94459A TO-247AC |
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