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IRFZ34VPBF ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 4 Page - International Rectifier

๋ถ€ํ’ˆ๋ช… IRFZ34VPBF
์ƒ์„ธ๋‚ด์šฉ  HEXFET Power MOSFET
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์ œ์กฐ์‚ฌ  IRF [International Rectifier]
ํ™ˆํŽ˜์ด์ง€  http://www.irf.com
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IRFZ34VPBF ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 4 Page - International Rectifier

   
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IRFZ34VPbF
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
V
, Drain-to-Source Voltage (V)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
10
20
30
40
50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
30A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
100
1000
0.0
0.4
0.8
1.2
1.6
2.0
V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
ยฐ
T = 175 C
J
ยฐ
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
ยฐ
ยฐ
J
C
V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms


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