전자부품 데이터시트 검색엔진
  Korean  ▼

Delete All
ON OFF
ALLDATASHEET.CO.KR

X  

Preview PDF Download HTML

BT150S 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 BT150S
부품 상세설명  Thyristors logic level
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BT150S 데이터시트(HTML) 2 Page - NXP Semiconductors

  BT150S Datasheet HTML 1Page - NXP Semiconductors BT150S Datasheet HTML 2Page - NXP Semiconductors BT150S Datasheet HTML 3Page - NXP Semiconductors BT150S Datasheet HTML 4Page - NXP Semiconductors BT150S Datasheet HTML 5Page - NXP Semiconductors BT150S Datasheet HTML 6Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
Philips Semiconductors
Product specification
Thyristors
BT150S series
logic level
BT150M series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
-
-
3.0
K/W
junction to mounting base
R
th j-a
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
-
15
200
µA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
-
0.17
10
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
0.10
6
mA
V
T
On-state voltage
I
T = 5 A
-
1.23
1.8
V
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.4
1.5
V
V
D = VDRM(max); IT = 0.1 A; Tj = 110 ˚C
0.1
0.2
-
V
I
D, IR
Off-state leakage current
V
D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 ˚C;
-
50
-
V/
µs
off-state voltage
exponential waveform; R
GK = 100 Ω
t
gt
Gate controlled turn-on
I
TM = 10 A; VD = VDRM(max); IG = 5 mA;
-
2
-
µs
time
dI
G/dt = 0.2 A/µs
t
q
Circuit commutated
V
D = 67% VDRM(max); Tj = 125 ˚C; ITM = 8 A;
-
100
-
µs
turn-off time
V
R = 10 V; dITM/dt = 10 A/µs;
dV
D/dt = 2 V/µs; RGK = 1 kΩ
October 1997
2
Rev 1.100


Html Pages

1  2  3  4  5  6 


데이터시트 다운로드

Go To PDF Page

관련 부품명

부품명부품 상세설명Html View제조업체
BT150 Thyristors logic level 1  2  3  4  5  More NXP Semiconductors
BT168 Thyristors logic level for RCD/ GFI/ LCCB applications 1  2  3  4  5  More NXP Semiconductors
BT168W Thyristors logic level for RCD/ GFI/ LCCB applications 1  2  3  4  5  More NXP Semiconductors
BT258 Thyristors logic level 1  2  3  4  5  More NXP Semiconductors
BT258X Thyristors logic level 1  2  3  4  5  More NXP Semiconductors
BT258B Thyristors logic level 1  2  3  4  5  More NXP Semiconductors
BT258S-800R Thyristors logic level 1  2  3  4  5  More NXP Semiconductors
BT258U Thyristors logic level 1  2  3  4  5  More NXP Semiconductors
BT148S-600Z Thyristors logic level 1  2  3  4  5  More NXP Semiconductors
BT169 Thyristors logic level 1  2  3  4  5  More NXP Semiconductors

링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn