전자부품 데이터시트 검색엔진 |
|
SI5943DU 데이터시트(PDF) 2 Page - Vishay Siliconix |
|
SI5943DU 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Vishay Siliconix SPICE Device Model Si5943DU SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 0.75 V On-State Drain Current a ID(on) VDS ≤ −5 V, VGS = −4.5 V 73 A VGS = −4.5 V, ID = −3.6 A 0.052 0.053 VGS = −2.5 V, ID = −3.1 A 0.075 0.073 Drain-Source On-State Resistance a rDS(on) VGS = −1.8 V, ID = −0.83 A 0.106 0.098 Ω Forward Transconductance a gfs VDS = −6 V, ID = −3.6 A 18 11 S Diode Forward Voltage a VSD IS = −4 A −0.85 −0.80 V Dynamic b Input Capacitance Ciss 624 460 Output Capacitance Coss 169 170 Reverse Transfer Capacitance Crss VDS = −6 V, VGS = 0 V, f = 1 MHz 118 115 pF VDS = −6 V, VGS = −8 V, ID = −5A 8 10 Total Gate Charge Qg 5 6 Gate-Source Charge Qgs 0.90 0.90 Gate-Drain Charge Qgd VDS = −6 V, VGS = −4.5 V, ID = −5 A 1.65 1.65 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 74177 S-61262 Rev. A, 24-Jul-06 |
유사한 부품 번호 - SI5943DU |
|
유사한 설명 - SI5943DU |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |