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2SK3526-01L 데이터시트(PDF) 2 Page - Fuji Electric

부품명 2SK3526-01L
상세설명  N-CHANNEL SILICON POWER MOSFET
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제조업체  FUJI [Fuji Electric]
홈페이지  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3526-01L 데이터시트(HTML) 2 Page - Fuji Electric

  2SK3526-01L Datasheet HTML 1Page - Fuji Electric 2SK3526-01L Datasheet HTML 2Page - Fuji Electric 2SK3526-01L Datasheet HTML 3Page - Fuji Electric 2SK3526-01L Datasheet HTML 4Page - Fuji Electric  
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Characteristics
2SK3526-01L,S,SJ
FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
02468
10 12 14 16 18 20 22 24 26 28 30
0
2
4
6
8
10
12
14
16
18
20V
10V
8V
7.5V
7.0V
VDS [V]
Typical Output Characteristics
VGS=6.5V
01234
5
6789
10
0.1
1
10
VGS[V]
Typical Transfer Characteristic
0.1
1
10
0.1
1
10
100
ID [A]
Typical Transconductance
0
2
4
6
8
1012
14
1618
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Tch [
°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
0
255075
100
125
150
0
50
100
150
200
Allowable Power Dissipation
PD=f(Tc)
Tc [
°C]


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