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BTA208B-500E 데이터시트(PDF) 4 Page - NXP Semiconductors |
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BTA208B-500E 데이터시트(HTML) 4 Page - NXP Semiconductors |
4 / 4 page Philips Semiconductors Product specification Three quadrant triacs BTA208 series B high commutation Fig.7. Normalised gate trigger current I GT(Tj)/ IGT(25˚C), versus junction temperature Tj. Fig.8. Normalised latching current I L(Tj)/ IL(25˚C), versus junction temperature T j. Fig.9. Normalised holding current I H(Tj)/ IH(25˚C), versus junction temperature T j. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Z th j-mb, versus pulse width t p. Fig.12. Typical, critical rate of change of commutating current, dI com/dt versus junction temperature. -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 BTA212 Tj / C T2+ G+ T2+ G- T2- G- IGT(Tj) IGT(25 C) 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 BT137 VT / V IT / A Tj = 125 C Tj = 25 C typ max Vo = 1.264 V Rs = 0.0378 Ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 TRIAC Tj / C IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s 0.01 0.1 1 10 BT137 tp / s Zth j-mb (K/W) t p P t D bidirectional unidirectional -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 TRIAC Tj / C IH(Tj) IH(25C) 20 40 60 80 100 120 140 1 10 100 1000 BTA208 Tj / C dIcom/dt (A/ms) September 1997 4 Rev 1.200 |
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