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IRLZ24NL 데이터시트(PDF) 2 Page - International Rectifier |
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IRLZ24NL 데이터시트(HTML) 2 Page - International Rectifier |
2 / 10 page IRLZ24NS/L Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.060 VGS = 10V, ID = 11A ––– ––– 0.075 Ω VGS = 5.0V, ID = 11A ––– ––– 0.105 VGS = 4.0V, ID = 9.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 8.3 ––– ––– S VDS = 25V, ID = 11A ––– ––– 25 VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 15 ID = 11A Qgs Gate-to-Source Charge ––– ––– 3.7 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 7.1 ––– VDD = 28V tr Rise Time ––– 74 ––– ID = 11A td(off) Turn-Off Delay Time ––– 20 ––– RG = 12Ω, VGS = 5.0V tf Fall Time ––– 29 ––– RD = 2.4Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 480 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS RDS(on) Static Drain-to-Source On-Resistance LS Internal Source Inductance 7.5 ns IDSS Drain-to-Source Leakage Current µA Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 11A Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics S D G A 18 72 Pulse width ≤ 300µs; duty cycle ≤ 2%. Notes:
Uses IRLZ24N data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. I SD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C V DD = 25V, starting TJ = 25°C, L = 790µH RG = 25Ω, IAS = 11A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) |
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