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FKPF12N60 데이터시트(HTML) 2 Page - Fairchild Semiconductor

부품명 FKPF12N60
상세내용  Bi-Directional Triode Thyristor Planar Silicon
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제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FKPF12N60 데이터시트(HTML) 2 Page - Fairchild Semiconductor

  FKPF12N60 데이터시트 HTML 1Page - Fairchild Semiconductor FKPF12N60 데이터시트 HTML 2Page - Fairchild Semiconductor FKPF12N60 데이터시트 HTML 3Page - Fairchild Semiconductor FKPF12N60 데이터시트 HTML 4Page - Fairchild Semiconductor FKPF12N60 데이터시트 HTML 5Page - Fairchild Semiconductor FKPF12N60 데이터시트 HTML 6Page - Fairchild Semiconductor FKPF12N60 데이터시트 HTML 7Page - Fairchild Semiconductor  
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©2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
Electrical Characteristics T
C=25°C unless otherwise noted
Notes:
1. Gate Open
2. Measurement using the gate trigger characteristics measurement circuit
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below
4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W
Quadrant Definitions for a Triac
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
IDRM
Repetieive Peak Off-State Current
VDRM applied
-
-
20
µA
VTM
On-State Voltage
TC=25°C, ITM=17A
Instantaneous measurement
--
1.5
V
VGT
Gate Trigger Voltage (Note 2)
I
VD=6V, RL=6Ω,
RG=330Ω
T2(+), Gate (+)
-
-
1.5
V
II
T2(+), Gate (-)
-
-
1.5
V
III
T2(-), Gate (-)
-
-
1.5
V
IGT
Gate Trigger Current (Note 2)
I
VD=6V, RL=6Ω,
RG=330Ω
T2(+), Gate (+)
-
-
30
mA
II
T2(+), Gate (-)
-
-
30
mA
III
T2(-), Gate (-)
-
-
30
mA
VGD
Gate Non-Trigger Voltage
TJ=125°C, VD=1/2VDRM
0.2
-
-
V
IH
Holding Current
VD = 12V, ITM = 1A
50
mA
IL
Latching Current
I, III
VD = 12V, IG = 1.2IGT
50
mA
II
70
mA
dv/dt
Critical Rate of Rise of
Off-State Voltag
VDRM = Rated, Tj = 125°C,
Exponential Rise
300
V/
µs
(dv/dt)C
Critical-Rate of Rise of Off-State
Commutating Voltage (Note 3)
10
-
-
V/
µs
VDRM
(V)
Test Condition
Commutating voltage and current waveforms
(inductive load)
FKPF12N60
1. Junction Temperature
TJ=125°C
2. Rate of decay of on-state
commutating current
(di/dt)C = - 6.0A/ms
3. Peak off-state voltage
VD = 400V
FKPF12N80
Supply Voltage
Main Current
Main Voltage
Time
Time
Time
VD
(dv/dt)C
(di/dt)C
T2 Positive
+
-
T2 Negative
Quadrant II
Quadrant I
Quadrant III
Quadrant IV
IGT -+ IGT
(+) T2
(+) IGT
GATE
T1
(+) T2
(+) IGT
GATE
T1
(+) T2
(+) IGT
GATE
T1
(+) T2
(+) IGT
GATE
T1


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