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FKN1N60SA 데이터시트(HTML) 2 Page - Fairchild Semiconductor

부품명 FKN1N60SA
상세내용  TRIAC (Silicon Bidirectional Thyristor)
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제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FKN1N60SA 데이터시트(HTML) 2 Page - Fairchild Semiconductor

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FKN1N60SA Rev. A
Electrical Characteristics T
C = 25°C unless otherwise noted
Commutation dv/dt test
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
IDRM
IRRM
Repetieive Peak Off-State Current
VDRM/VRRM applied
-
-
100
µA
VTM
On-State Voltage
TC=25°C, ITM=1.12A
Instantaneous measurement
-
-
1.8
V
VGT
Gate Trigger Voltage
I
VD=12V, RL=100Ω
T2(+), Gate (+)
-
-
2.0
V
II
T2(+), Gate (-)
-
-
2.0
V
III
T2(-), Gate (-)
-
-
2.0
V
IGT
Gate Trigger Current
I
VD=12V, RL=100Ω
T2(+), Gate (+)
-
-
5
mA
II
T2(+), Gate (-)
-
-
5
mA
III
T2(-), Gate (-)
-
-
5
mA
VGD
Gate Non-Trigger Voltage
TJ=125°C, VD=1/2VDRM
0.2
-
-
V
IH
Holding Current
(I, II,III)
VD = 12V, ITM = 200mA
-
-
15
mA
IL
Latching Current
I, III
VD = 12V, IG = 10mA
-
-
15
mA
II
-
-
20
mA
dv/dt(s)
Critical Rate of Rise of
Off-State Voltag
VDRM = 63% Rated, Tj = 125°C,
Exponential Rise
20
-
-
V/
µs
dv/dt(c)
Critical-Rate of Rise of Off-State Com-
mutating Voltage (di/dt=-0.7A/uS)
3.0
-
-
V/
µs
Device
Test Condition
Commutating voltage and current waveforms
(inductive load)
FKN1N60SA
1. Junction Temperature
TJ=125°C
2. Rate of decay of on-state
commutating current (di/dt)C
3. Peak off-state voltage
VD = 300V
Supply Voltage
Main Current
Main Voltage
Time
Time
Time
VD
(dv/dt)C
(di/dt)C


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