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BU2515DF 데이터시트(PDF) 1 Page - NXP Semiconductors |
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BU2515DF 데이터시트(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 9 A I CM Collector current peak value - 20 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W V CEsat Collector-emitter saturation voltage I C = 4.5 A; IB = 0.9 A - 5.0 V I Csat Collector saturation current f = 56 kHz 4.5 - A V F Diode forward voltage I F = 4.5 A - 2.2 V t f Fall time I Csat = 4.5 A; f = 56 kHz 0.2 0.4 µs PINNING - SOT199 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 9 A I CM Collector current peak value - 20 A I B Base current (DC) - 5 A I BM Base current peak value - 7.5 A -I B(AV) Reverse base current average over any 20 ms period - 125 mA -I BM Reverse base current peak value 1 -6 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W T stg Storage temperature -55 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-hs Junction to heatsink with heatsink compound - 2.8 K/W R th j-a Junction to ambient in free air 35 - K/W 12 3 case b c e Rbe 1 Turn-off current. September 1997 1 Rev 1.200 |
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