Rev.1.2_48a_bezc

2

M6MGD137W34DWG

RENESAS

CONFIDENTIAL

134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &

33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM

Stacked-CSP ( Chip Scale Package)

Renesas LSIs

Capacitance

MCP Block Diagram

Min.

Typ.

Max.

COUT

Output

Capacitance

DQ15-DQ0, F-RY/BY#

34

pF

Symbol

Conditions

Ta=25°C, f=1MHz,

Vin=Vout=0V

CIN

Unit

Limits

Parameter

Input

capacitance

F-A21-A0, F-OE#, F-WE#, F-CE1#,

F-CE2#, F-WP#, F-RP#, M-OE#,

M-WE#, M-CE#, M-LB#, M-UB#

26

pF

A0 to F-A21

F-WP#

F-RP#

M-WE#

M-OE#

M-UB#

M-LB#

DQ0 to DQ15

128Mbit DINOR IV

Flash Memory

32Mbit

Mobile RAM

FM-Vcc GND

F-CE1#

F-CE2#

A0 to A20

M-CE#

F-OE#

F-WE#

A0 to F-A21

F-RY/BY#

Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#=“L” and upper 64Mbit is done

by F-CE2#=“L”. Never select each chip at the same time.

In the data sheet there are “VCC”s which mean “FM-VCC” (Common Vcc for Flash / Mobile RAM).

In the Flash Memory part they mean A21, OE# and WE# are F-A21, F-OE# and F-WE#.

In the Mobile RAM part UB# , LB#, OE# and WE# are M-UB# , M-LB#, M-OE# and M-WE#, respectively.