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IRF8010PBF λ°μ΄ν„°μ‹œνŠΈ(HTML) 2 Page - International Rectifier

λΆ€ν’ˆλͺ… IRF8010PBF
μƒμ„Έλ‚΄μš©  HEXFET Power MOSFET
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μ œμ‘°μ‚¬  IRF [International Rectifier]
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IRF8010PBF λ°μ΄ν„°μ‹œνŠΈ(HTML) 2 Page - International Rectifier

   
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IRF8010PbF
2
www.irf.com
S
D
G
Static @ TJ = 25Β°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
βˆ†V
(BR)DSS/βˆ†TJ
Breakdown Voltage Temp. Coefficient
–––
0.11
–––
V/Β°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
12
15
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
Β΅A
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Dynamic @ TJ = 25Β°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
82
–––
–––
V
Qg
Total Gate Charge
–––
81
120
Qgs
Gate-to-Source Charge
–––
22
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
26
–––
td(on)
Turn-On Delay Time
–––
15
–––
tr
Rise Time
–––
130
–––
td(off)
Turn-Off Delay Time
–––
61
–––
ns
tf
Fall Time
–––
120
–––
Ciss
Input Capacitance
–––
3830
–––
Coss
Output Capacitance
–––
480
–––
Crss
Reverse Transfer Capacitance
–––
59
–––
pF
Coss
Output Capacitance
–––
3830
–––
Coss
Output Capacitance
–––
280
–––
Coss eff.
Effective Output Capacitance
–––
530
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
dh
mJ
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
Β™
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
80
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
320
(Body Diode)
Ùh
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
99
150
ns
Qrr
Reverse RecoveryCharge
–––
460
700
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typ.
–––
–––
–––
Conditions
VDS = 25V, ID = 45A
ID = 80A
VDS = 80V
Conditions
26
VGS = 10V
f
VGS = 0V
VDS = 25V
Ζ’ = 1.0MHz
310
45
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25Β°C, IS = 80A, VGS = 0V f
TJ = 150Β°C, IF = 80A, VDD = 50V
di/dt = 100A/Β΅s
f
Conditions
VGS = 0V, ID = 250Β΅A
Reference to 25Β°C, ID = 1mA
VGS = 10V, ID = 45A
f
VDS = VGS, ID = 250Β΅A
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125Β°C
VGS = 20V
VGS = -20V
Max.
VGS = 0V, VDS = 1.0V, Ζ’ = 1.0MHz
VGS = 0V, VDS = 80V, Ζ’ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
e
VGS = 10V
f
VDD = 50V
ID = 80A
RG = 39Ω


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