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FDS8962C 데이터시트(PDF) 3 Page - Fairchild Semiconductor

부품명 FDS8962C
상세설명  Dual N & P-Channel PowerTrench MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8962C 데이터시트(HTML) 3 Page - Fairchild Semiconductor

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FDS8962C Rev.
A
1
Notes:
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
1.3
-1.3
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
VGS = 0 V, IS = -1.3 A
(Note 2)
Q1
Q2
0.75
-0.88
1.2
-1.2
V
trr
Diode Reverse Recovery Time
Q1
IF = 7 A, diF/dt = 100 A/µs
Q2
IF = -5 A, diF/dt = 100 A/µs
Q1
Q2
19
19
nS
Qrr
Diode Reverse Recovery Charge
Q1
Q2
9
6
nC
a) 78°/W when mounted
on a 0.5 in2 pad of 2 oz
copper
b) 125°/W when mounted
on a .02 in2 pad of 2 oz
copper
c) 135°/W when mounted
on a minimum pad.
Electrical Characteristics TA = 25°C unless otherwise noted (Continued)
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units


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