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STP8NK100Z 데이터시트(PDF) 2 Page - STMicroelectronics |
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2 / 13 page 1 Electrical ratings STF8NK100Z - STP8NK100Z 2/13 1 Electrical ratings Table 1. Absolute maximum ratings Table 2. Thermal data Table 3. Avalanche Characteristics Symbol Parameter Value Unit TO-220 TO-220FP VDS Drain-source Voltage (VGS=0) 1000 V VDGR Drain-gate Voltage 1000 V VGS Gate-Source Voltage ± 30 V ID Note 1 Drain Current (continuous) at TC = 25°C 6.5 6.5 A ID Drain Current (continuous) at TC = 100°C 4.3 4.3 A IDM Note 2 Drain Current (pulsed) 16 16 A PTOT Total Dissipation at TC = 25°C 160 40 W Derating Factor 1.28 0.32 W/°C VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5K Ω) 4000 V dv/dt Note 3 Peak Diode Recovery voltage slope 4.5 V/ns VISO Insulation Withstand Voltage (DC) -- 2500 V Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 °C/W Rthj-a Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 6.5 A EAS Single Pulse Avalanche Energy (starting Tj= 25°C, ID=IAR, VDD=50V) 320 mJ |
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