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BU4508AF 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BU4508AF 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 12 page June 1998 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 6.0 V; IC = 0 A - - 100 uA BV EBO Emitter-base breakdown voltage I B = 1 mA 7.5 13.5 - V V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 800 - - V L = 25 mH V CEsat Collector-emitter saturation voltages I C = 5.0 A; IB = 1.25 A - - 3.0 V V BEsat Base-emitter saturation voltage I C = 5.0 A; IB = 1.25 A 0.85 0.94 1.03 V h FE DC current gain I C = 100 mA; VCE = 5 V - 12 - h FE I C = 5.0 A; VCE = 5 V 4.2 5.7 7.3 DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C c Collector capacitance I E = 0 A; VCB = 10 V; f = 1 MHz 80 - pF Switching times (16 kHz line I Csat = 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A) deflection circuit) t s Turn-off storage time 3.2 4.3 µs t f Turn-off fall time 0.35 0.48 µs Switching times (64 kHz line I Csat = 4 A; IB1 = 0.8 A;(IB2 = -2.0 A) deflection circuit) t s Turn-off storage time 1.9 - µs t f Turn-off fall time 0.17 - µs 2 Measured with half sine-wave voltage (curve tracer). |
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