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BU4525AF 데이터시트(PDF) 4 Page - NXP Semiconductors |
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BU4525AF 데이터시트(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4525AF Fig.7. High and low DC current gain. Fig.8. Typical base-emitter saturation voltage. Fig.9. Typical collector storage and fall time. I C =9 A; Tj = 85˚C; f = 16kHz Fig.10. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C Fig.11. Transient thermal impedance. Fig.12. I Csat during normal running vs. frequency of operation for optimum performance 0.01 0.1 1 10 100 1 10 100 BU4525 5V VCE = 5V hFE IC / A Ths = 85 C Ths = 25 C 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 01 23 4 0.6 0.7 0.8 0.9 1 1.1 1.2 IC = 9 A IC = 7 A Ths = 25 C Ths = 85 C BU4525AF/X/W IB / A VBEsat / V 1.0E-07 1.0E-05 1.0E-03 1.0E-01 1.0E+01 0.001 0.01 0.1 1 10 0 0.2 0.1 0.05 0.02 0.5 BU4525AF t / s Zth K/W D = tp tp T T P t D 012 34 0 2 4 6 8 10 ICsat = 9 A Ths = 85 C Freq = 16 kHz ts tf IB / A ts/tf / us 0 2040 6080 100 0 2 4 6 8 10 Ic(sat) (A) Frequency (kHz) October 1998 4 Rev 1.100 |
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