제조업체 | 부품명 | 데이터시트 | 상세설명 |
Intersil Corporation |
3N200
|
383Kb / 6P |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
Vaishali Semiconductor |
3N187
|
486Kb / 8P |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
List of Unclassifed Man... |
3N153
|
148Kb / 3P |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
3N142
|
278Kb / 5P |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
Digitron Semiconductors |
3N209
|
820Kb / 5P |
N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS
|
Motorola, Inc |
MFE212
|
496Kb / 5P |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Digitron Semiconductors |
MFE211
|
1Mb / 5P |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
New Jersey Semi-Conduct... |
MFE211
|
98Kb / 2P |
N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
3N128
|
153Kb / 1P |
N-CHANNEL INSULATED-GATE DEPLETION-TYPE FIELD-EFFECT TRANSISTOR
|
NXP Semiconductors |
BC264A
|
294Kb / 6P |
N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS
December 1990 |