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SS98 데이터시트(PDF) 6 Page - Infineon Technologies AG |
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SS98 데이터시트(HTML) 6 Page - Infineon Technologies AG |
6 / 7 page BSS 98 Data Sheet 6 05.99 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 V DS 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 A 0.70 I D V GS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l Ptot = 1W l 10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 0.00 0.10 0.20 0.30 0.40 A 0.60 I D 0 1 2 3 4 5 6 7 8 9 Ω 11 R DS (on) VGS [V] = a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l l 10.0 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 A 0.65 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.00 0.10 0.20 0.30 0.40 A 0.55 I D 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 0.26 S 0.30 g fs |
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