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전자부품 데이터시트 검색엔진 |
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SB10150CT 데이터시트(HTML) 1 Page - Won-Top Electronics |
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SB10150CT 데이터시트(HTML) 1 Page - Won-Top Electronics |
1 / 4 page ![]() SB10150CT 1 of 4 © 2006 Won-Top Electronics Pb SB10150CT 10A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip B ! Guard Ring for Transient Protection ! Low Forward Voltage Drop C ! Low Reverse Leakage Current ! High Surge Current Capability G A ! Plastic Material has UL Flammability Classification 94V-O PIN1 2 3 D Mechanical Data F E ! Case: TO-220, Molded Plastic ! Terminals: Plated Leads Solderable per P MIL-STD-202, Method 208 ! Polarity: See Diagram I ! Weight: 2.24 grams (approx.) ! Mounting Position: Any H L ! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max. ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 PIN 1 - + J PIN 3 - Case, PIN 2 K Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB10150CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 150 V RMS Reverse Voltage VR(RMS) 105 V Average Rectified Output Current @TC = 95°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage @IF = 5.0A VFM 0.92 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 50 mA Typical Junction Capacitance (Note 1) Cj 700 pF Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS TO-220 Dim Min Max A 13.90 15.90 B 9.80 10.70 C 2.54 3.43 D 3.56 4.56 E 12.70 14.73 F 0.51 0.96 G 3.55 Ø 4.09 Ø H 5.75 6.85 I 4.16 5.00 J 2.03 2.92 K 0.30 0.65 L 1.14 1.40 P 2.29 2.79 All Dimensions in mm |