2N3442G datasheet(3/4 Pages) ONSEMI

부품명	2N3442G

상세설명	High?뭁ower Industrial Transistors

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2N3442

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ACTIVE REGION SAFE OPERATING AREA INFORMATION

There are two limitations on the power−handling

ability of a transistor: average junction temperature and

second breakdown. Safe operating area curves indicate

IC − VCE limits of the transistor that must be observed

for reliable operation, i.e., the transistor must not be

subjected to greater dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200_C; TC

is variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations

imposed by second breakdown.

20

2.0

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

10

7.0

5.0

3.0

2.0

1.0

0.7

0.2

5.0

20

100

200

CURRENT LIMIT

THERMAL LIMIT @ TC = 25°C

SINGLE PULSE

SECOND BREAKDOWN LIMIT

dc

1.0 ms

10 ms

0.5

0.3

3.0

7.0 10

30

50 70

30 ms

50 ms

100 ms

TJ = 200°C

100 ms

Figure 2. 2N3442

400

0.1

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

4.0

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0

10

40

20

100

60

TJ = 150°C

25°C

−55 °C

VCE = 4.0 V

6.0

10

200

7.0

Figure 4. Collector−Saturation Region

1.4

2.0

IB, BASE CURRENT (mA)

0

5.0

10

20

50

100

200

500

1.0k 2.0k

1.0

0.8

0.6

0.4

IC = 1.0 A

TJ = 25°C

4.0 A

8.0 A

1.2

0.2

2.0 A

유사한 부품 번호 - 2N3442G

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유사한 부품 번호 - 2N3442G

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