2N5089G datasheet(2/5 Pages) ONSEMI

부품명	2N5089G

상세설명	Amplifier Transistors NPN Silicon

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2N5088, 2N5089

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0)

2N5088

2N5089

V(BR)CEO

30

25

−

Vdc

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

2N5088

2N5089

V(BR)CBO

35

30

−

Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

2N5088

(VCB = 15 Vdc, IE = 0)

2N5089

ICBO

−

50

nAdc

Emitter Cutoff Current

(VEB(off) = 3.0 Vdc, IC = 0)

(VEB(off) = 4.5 Vdc, IC = 0)

IEBO

−

50

100

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc)

2N5088

2N5089

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5088

2N5089

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)

2N5088

2N5089

hFE

300

400

350

450

300

400

900

1200

−

Collector −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

VCE(sat)

−

0.5

Vdc

Base −Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)

VBE(on)

−

0.8

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

fT

50

−

MHz

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

−

4.0

pF

Emitter−Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

−

10

pF

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

2N5088

2N5089

hfe

350

450

1400

1800

−

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

2N5088

2N5089

NF

−

3.0

2.0

dB

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

유사한 부품 번호 - 2N5089G

제조업체	부품명	데이터시트	상세설명
Unisonic Technologies	2N5089G-T92-B	96Kb / 3P	NPN GENERAL PURPOSE AMPLIFIER
	2N5089G-T92-B	96Kb / 3P	NPN GENERAL PURPOSE AMPLIFIER
	2N5089G-T92-K	96Kb / 3P	NPN GENERAL PURPOSE AMPLIFIER
	2N5089G-T92-K	96Kb / 3P	NPN GENERAL PURPOSE AMPLIFIER
	2N5089G-T92-R	96Kb / 3P	NPN GENERAL PURPOSE AMPLIFIER

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유사한 설명 - 2N5089G

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MPS918	62Kb / 4P	Amplifier Transistors(NPN Silicon) 1996
	BC237	54Kb / 4P	Amplifier Transistors NPN Silicon January, 2006 ??Rev. 4
	2N5550	88Kb / 6P	Amplifier Transistors NPN Silicon March, 2007 ??Rev. 5
New Jersey Semi-Conduct...	MPSU06F	83Kb / 1P	NPN Silicon Amplifier Transistors
Leshan Radio Company	MMBT6428LT1	209Kb / 4P	Amplifier Transistors(NPN Silicon)
ON Semiconductor	MBT6429DW1T1	79Kb / 5P	Amplifier Transistors NPN Silicon December, 2005 ??Rev. 2
ON Semiconductor	BC237	83Kb / 4P	Amplifier Transistors(NPN Silicon) 1996 REV 1
Motorola, Inc	BD525	82Kb / 2P	NPN SILICON AMPLIFIER TRANSISTORS
ON Semiconductor	MPS918	46Kb / 3P	Amplifier Transistors NPN Silicon January, 2006 ??Rev. 3
ON Semiconductor	2N5209	277Kb / 6P	Amplifier Transistors(NPN Silicon) 1996

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2N5089G 데이터시트(PDF) 2 Page - ON Semiconductor

2N5089G 데이터시트(HTML) 2 Page - ON Semiconductor

유사한 부품 번호 - 2N5089G

유사한 설명 - 2N5089G

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